Ding et al. Nanoscale Research Letters (2017) 12:172 DOI 10.1186/s11671-017-1927-x

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Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition Xingwei Ding1,2, Cunping Qin2, Jiantao Song1, Jianhua Zhang1,2*, Xueyin Jiang3 and Zhilin Zhang1,3 Erratum The original publication [1] is missing the funding information in the acknowledgement. The missing part can be found here: “This work was funded by National Key Basic Research Program of China (2015CB655005) and Science and Technology Commission of Shanghai Municipality Program (14DZ228090).” Author details 1 Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, Jingan District 200070, People’s Republic of China. 2School of Mechatronics and Automation, Shanghai University, Shanghai 200072, China. 3Department of Materials Science, Shanghai University, Shanghai 200072, China. Received: 17 February 2017 Accepted: 17 February 2017

Reference 1. (2017). The influence of hafnium doping on density-of-states in zinc oxide thin-film transistors deposited via atomic layer deposition. Nanoscale Res. Lett 12:63. doi:10.1186/s11671-017-1852-z

* Correspondence: [email protected] 1 Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, Jingan District 200070, People’s Republic of China 2 School of Mechatronics and Automation, Shanghai University, Shanghai 200072, China © The Author(s). 2017 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition.

Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition. - PDF Download Free
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