www.nature.com/scientificreports
OPEN
received: 02 December 2015 accepted: 18 April 2016 Published: 06 May 2016
Active Adoption of Void Formation in Metal-Oxide for All Transparent Super-Performing Photodetectors Malkeshkumar Patel1,*, Hong-Sik Kim1,*, Hyeong-Ho Park2 & Joondong Kim1 Could ‘defect-considered’ void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85–95%). This heterojunction provides extremely low saturation current (
OPEN
received: 02 December 2015 accepted: 18 April 2016 Published: 06 May 2016
Active Adoption of Void Formation in Metal-Oxide for All Transparent Super-Performing Photodetectors Malkeshkumar Patel1,*, Hong-Sik Kim1,*, Hyeong-Ho Park2 & Joondong Kim1 Could ‘defect-considered’ void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85–95%). This heterojunction provides extremely low saturation current (
